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A Class-AB Bulk-Driven Amplifier with Enhanced Transconductance Using Quasi-Floating Gate Method

Meysam Akbari

Faculty of Electrical Engineering, Shahid Beheshti University, G.C., Tehran, Iran

E-mail Address: me_akbari@sbu.ac.ir

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and

Omid Hashemipour

Faculty of Electrical Engineering, Shahid Beheshti University, G.C., Tehran, Iran

E-mail Address: hashemipour@sbu.ac.ir

Corresponding author.

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https://doi.org/10.1142/S0218126618501372Cited by:3 (Source: Crossref)

Abstract

This paper presents a supper class-AB adaptive biasing bulk-driven amplifier for ultra-low-power applications. In the proposed structure, two bulk-driven flipped voltage follower (FVF) cells are reconfigured as nonlinear tail currents using quasi-floating gate method to enhance transconductance and slew rate. In addition, two idle current controllers are employed as common source amplifiers to provide a supper class-AB structure without increasing total current consumption. The proposed structure is simulated in 0.18- $μ$ m CMOS technology at 0.5V supply with 35nW power budget. The results show a 57.9dB DC gain, 8.8kHz gain bandwidth and 38.2V/ms slew rate for the proposed amplifier.

This paper was recommended by Regional Editor Piero Malcovati.

Keywords:

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