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In this study, we investigated multiple magnetization plateaus in a graphdiyne-type nanolattice using Monte Carlo simulations within the framework of the Blume–Capel model and the Metropolis algorithm. The analysis revealed distinct magnetization plateaus for specific parameter values, indicating a significant increase in the number of stable magnetic states. The total magnetization ($M_{\mathrm{\text{tot}}}$) exhibits four plateaus corresponding to critical field levels ($h_{C_1}$, $h_{C_2}$, $h_{C_3}$) and the saturation field ($h_S$). The effects of the reduced exchange coupling parameter ($j_{S\sigma }$), the crystal field parameter (d), and the temperature (t) on the magnetization plateaus were systematically examined. The magnetization plateau behavior observed in the graphdiyne-like nanolattice was comparable to that of other systems studied using Monte Carlo simulations. Future applications may include the development of advanced magnetic storage devices and quantum computing elements, where precise control of magnetic states is essential.

We study the two-dimensional Ginzburg–Landau functional in a domain with corners for exterior magnetic field strengths near the critical field where the transition from the superconducting to the normal state occurs. We discuss and clarify the definition of this field and obtain a complete asymptotic expansion for it in the large κ regime. Furthermore, we discuss nucleation of superconductivity at the boundary.

The resistivities along c-axis ρ_c(H, T) of ErNi₂ B₂C have been measured with H_⊥ and H_‖c-axis for 2 < T < 300 K and the superconducting upper critical field H_c2(T) curves of ErNi₂B₂C were constructed for each magnetic fields. Our H_c2(T) curves have been compared and discussed with those from ρ_ab(H, T) measurements which explain the anisotropy and its temperature dependence of H_c2(T) are thought to arise from magnetic pair breaking and the anisotropic field dependence of Néel temperature T_N originated from Er⁺³ sublattice.

The thermodynamics of a superconductor, with pairing and quartet-binding BCS-type attractions V_BCS and V, is investigated in the strong-coupling limit. The coupled equations for the gap parameters Δ_G, Δ_g, corresponding to both potentials, are solved and the thermodynamic functions are computed for varying coupling constant g₀ of the quartet attraction V. Some untypical thermal properties of tin, mercury, and high-T_c superconductors, which have not been fully explained by theory, are found to agree with this strong-coupling thermodynamics. Sufficiently strong V eliminates the BCS pairing potential and the conducting fermions behave as if they were interacting only via V. The structure of the condensate at T = 0 is studied and shown to consist almost exclusively of Cooper pairs if g₀ ≤ 0.2G₀ (G₀ denoting the coupling constant of V_BCS), whereas if g₀ > 2G₀, all fermions merge into quartets.

An ensemble Monte Carlo simulation is used to compare bulk electron transport in wurtzite phase GaN, AlN and InN materials. Electronic states within the conduction band valleys at the Γ₁, U, M, Γ₃ and K are represented by non-parabolic ellipsoidal valleys centered on important symmetry points of the Brillouin zone. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to ~5 × 10⁷Vm^-1, appropriate to the gate-drain fields expected within an operational field effect transistor. The electron drift velocity relaxes to the saturation value of ~1.4 × 10⁵ms^-1 within 4 ps, for all crystal structures. The steady state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

An ensemble Monte Carlo simulation is used to compare high field electron transport in bulk InAs, InP and GaAs. In particular, velocity overshoot and electron transit times are examined. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material, about 400 kVm^-1 for the case of GaAs, 300 kVm^-1 for InAs and 700 kVm^-1 for InP. We find that InAs exhibits the highest peak overshoot velocity and that this velocity overshoot lasts over the longest distances when compared with GaAs and InP. Finally, we estimate the minimum transit time across a 1 μm GaAs sample to be a bout 3 ps. Similar calculations for InAs and InP yield 2.2 and 5 ps, respectively. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

The results of an ensemble Monte Carlo simulation of electron drift velocity response on the application field in bulk AlAs, AlGaAs and GaAs are presented. All dominant scattering mechanisms in the structure considered have been taken into account. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to 1600 kVm^-1, appropriate to the gate-drain fields expected within an operational field effect transistor. The electron drift velocity relaxes to the saturation value of ~10⁵ ms^-1 within 4 ps, for all crystal structures. The steady state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

This scientific study presents Monte Carlo simulations within a Blume–Capel Ising model to investigate polarization plateaus in carbon-based ferrielectric (1, 3/2) nanotubes. The study examines the impact of exchange coupling interactions, crystalline field, and temperature fluctuations on polarization plateaus. The results reveal the presence of three distinct polarization plateaus, with critical and saturation electric fields, and demonstrate that the behavior of polarization plateaus is significantly impacted by variations in exchange coupling interactions and the crystalline field. These results could enhance our comprehension of the underlying physics of polarization in carbon-based ferrielectric nanotubes and can have important implications for the development of spintronic devices. These results suggest further research to explore potential applications in the field of nanoelectronics.

This scientific paper presents a comprehensive investigation into the behavior of electric hysteresis cycles and polarization plateaus in the MXene-like system. Utilizing Monte Carlo simulations (MCs), the study explores the effects of ferrielectric and crystal field parameters on these phenomena. The coercive electric field and the surface characteristics of the loops in the electric hysteresis cycles are analyzed, along with the critical and saturation electric fields in the polarization plateaus. The research findings provide insights into the control of the MXene-like system, offering opportunities to optimize MXene materials for diverse applications. The study can contribute to the advancement of MXene research and lays the foundation for future developments in the field.

The effect of an applied magnetic field on an inhomogeneous superconductor is studied and the value of the upper critical magnetic field H_c3 at which superconductivity can nucleate is estimated. In addition, the authors locate the concentration of the order parameter, which depends on the inhomogeneous term a(x). Unlikely to the homogeneous case, the order parameter may concentrate in the interior of the superconducting material, due to the influence of the inhomogeneous term a(x).