Narrow Results

Innovations in electronics history have been possible because of the strong association of devices and materials research. The demand for low voltage, low power and high performance are the great challenges for engineering of sub 50nm gate length CMOS devices. Functional CMOS devices in the range of 5 nm channel length have been demonstrated. The alternative architectures allowing to increase devices drivability and reduce power are reviewed through the issues to address in gate/channel and substrate, gate dielectric as well as source and drain engineering. HiK gate dielectric and metal gate are among the most strategic options to consider for power consumption and low supply voltage management. It will be very difficult to compete with CMOS logic because of the low series resistance required to obtain high performance. By introducing new materials (Ge, diamond/graphite Carbon, HiK, …), Si based CMOS will be scaled beyond the ITRS as the future System-on-Chip Platform integrating new disruptive devices. The association of C-diamond with HiK as a combination for new functionalized Buried Insulators, for example, will bring new ways of improving short channel effects and suppress self-heating. That will allow new optimization of Ion-Ioff trade offs. The control of low power dissipation and short channel effects together with high performance will be the major challenges in the future.

This paper describes the recent advancements in the development of nanoelectronic SONOS nonvolatile semiconductor memory (NVSM) devices and technology, which are employed in both embedded applications, such as microcontrollers, and 'stand-alone', high-density, memory applications, such as cell phones and memory 'sticks'. Multi-dielectric devices, such as the MNOS devices, were among the first NVSM; however, over the ensuing years the double polysilicon, floating-gate device has become the dominant semiconductor NVSM technology. Today, however, questions arise as to future scaling and cost effectiveness of floating gate technology – questions, which have sparked renewed interest in SONOS technology. The latter offers a single polysilicon device structure with reduced lithography steps together with compact cell layouts - compatible with 'standard' CMOS technology for cost effectiveness. In addition, SONOS technology offers performance features, such as reduced erase and write voltage levels to ease the design of peripheral memory circuits with a decrease in electric fields and localized charge storage for improved reliability and multi-bit storage, and ease of memory testing. A special feature of SONOS technology is radiation hardness, which makes this technology ideal for advanced Space and Military systems. SONOS devices use ultra-thin tunnel oxides (2nm) and operate with 'modified' Fowler-Nordheim and 'direct' tunneling in both erase and write (program) modes. A thicker tunnel oxide SONOS device (5nm), called the NROM™ device, uses 'hot electron injection for programming and 'hot hole band-to-band tunneling' for erase. The NROM™ device provides spatially isolated, two-bit storage with the possibility of multi-level charge (MLC) storage at each bit location. This paper describes the physical electronics for these device structures and their erase/write, retention and endurance characteristics. In addition, several novel SONOS device structures are discussed as potential candidates for future NVSM.

A high mobility two-dimensional electron system exhibits large changes in the resistance, and zero-resistance states, under microwave and Terahertz excitation. We describe associated experimental results and the possibility of using this system as a radiation detector.

This paper presents a brief overview of intellectual property rights and the various areas in proteomics to which IP rights may be applicable. Technology transfer, including licensing and business agreements, is not covered in this paper. Instead, issues and complications that are related to national and overseas patent prosecution in this relatively new field would be discussed.

Applying Nano-Scale Technologies to Make Big Ideas Possible.

Toxicity of Engineered Nanomaterials.

Graphene for Smart Medical Devices.

Protein Nanocages: The Versatile Molecular Shell.

In the framework of the Green-function formalism the admittance field method is proposed for the calculation of the spectral density of current fluctuations of two and more terminal devices. The usefulness of the theory is illustrated by hydrodynamic calculations performed for a submicron GaAs structure. The unifying property of the formalism evidences the same physical ground of both the admittance and impedance field methods when instantaneous fluctuations of carrier accelerations during scattering events are taken as noise sources.

The placement of surface-mounted components is an essential stage in printed circuit board assembly (PCBA). A reduction in production time of placement through efficient process planning will significantly increase the total yield of the whole line. A new approach to solving this problem is presented. This is based on a knowledge-based component placement system (CPS), which incorporates ready optimization algorithms. This approach is particularly suited to sophisticated but popular multi-head concurrent operation assembly machines. A case for going beyond just achieving an overall shortest travel distance in placement is also argued. A case study of this approach is presented.

In the present review, we show how the chemistry of lanthanide macrocyclic complexes, which began almost 50 years ago in Russia, is still very active. Additionally to bisphthalocyanines complexes, triple-decker, but also quadruple- and quintuple-decker complexes have been synthesized via new chemical routes. The driving force for the development of this chemistry arises from the wide range of possible applications. Owing to their very high conductivity, compared to that of monophthalocyanines, LnPc₂ and Ln₂Pc₃ complexes are used as molecular semiconductors in electronic devices. The radical nature of LnPc₂ complexes makes them easily oxidized and reduced. This is the reason why they are particularly promising materials for the development of new chemical sensors, associated with both conductimetric and optical transducers.

In the present work, we determined the electrical properties of octachlorinated metallophthalocyanines with Co(II) and Cu(II) ions as metal centers. We engaged them in heterojunctions, with lutetium bisphthalocyanine as a partner. Surprisingly, cobalt and copper complexes show opposite behaviors, the first being an $n$-type material whereas the latter is a $p$-type material, as deduced from the response of the heterojunctions towards ammonia; showing the unusual key role played by the metal center. While the LuPc${}_{\mathrm{\text{2}}}$/Cu(Cl${}_{\mathrm{\text{8}}}$Pc) complex exhibits a negative response to ammonia, the LuPc${}_{\mathrm{\text{2}}}$/Co(Cl${}_{\mathrm{\text{8}}}$Pc) complex exhibits a positive response to ammonia, with a sensitivity of 1.47% ppm${}^{\mathrm{\text{-1}}}$ at concentrations lower than 10 ppm and a limit of detection of 250 ppb. All the devices operate at room temperature and in real atmosphere.

Development of nanosystems require integration of nanostructures into a microscale object that can interact with its environment and collectively provide a unique function. MEMS provides an ideal platform for such integration since it forms the link between the nano and macroscales while offering electronic, acoustic, thermal, optical, magnetic, mechanical, and fluidic interfaces with its environment. MEMS can also be used to develop instruments that can probe and manipulate nanostructures. This paper describes a few examples of both roles that MEMS can play.

Innovations in electronics history have been possible because of the strong association of devices and materials research. The demand for low voltage, low power and high performance are the great challenges for engineering of sub 50nm gate length CMOS devices. Functional CMOS devices in the range of 5 nm channel length have been demonstrated. The alternative architectures allowing to increase devices drivability and reduce power are reviewed through the issues to address in gate/channel and substrate, gate dielectric as well as source and drain engineering. HiK gate dielectric and metal gate are among the most strategic options to consider for power consumption and low supply voltage management. It will be very difficult to compete with CMOS logic because of the low series resistance required to obtain high performance. By introducing new materials(Ge, diamond/graphite Carbon, HiK,…), Si based CMOS will be scaled beyond the ITRS as the future System-on-Chip Platform integrating new disruptive devices. The association of C-diamond with HiK as a combination for new functionalized Buried Insulators, for example, will bring new ways of improving short channel effects and suppress self-heating. That will allow new optimization of Ion-Ioff trade offs. The control of low power dissipation and short channel effects together with high performance will be the major challenges in the future.

This paper describes the recent advancements in the development of nanoelectronic SONOS nonvolatile semiconductor memory (NVSM) devices and technology, which are employed in both embedded applications, such as microcontrollers, and 'stand-alone', high-density, memory applications, such as cell phones and memory 'sticks'. Multi-dielectric devices, such as the MNOS devices, were among the first NVSM; however, over the ensuing years the double polysilicon, floating-gate device has become the dominant semiconductor NVSM technology. Today, however, questions arise as to future scaling and cost effectiveness of floating gate technology – questions, which have sparked renewed interest in SONOS technology. The latter offers a single polysilicon device structure with reduced lithography steps together with compact cell layouts - compatible with 'standard' CMOS technology for cost effectiveness. In addition, SONOS technology offers performance features, such as reduced erase and write voltage levels to ease the design of peripheral memory circuits with a decrease in electric fields and localized charge storage for improved reliability and multi-bit storage, and ease of memory testing. A special feature of SONOS technology is radiation hardness, which makes this technology ideal for advanced Space and Military systems. SONOS devices use ultra-thin tunnel oxides (2nm) and operate with 'modified' Fowler-Nordheim and 'direct' tunneling in both erase and write (program) modes. A thicker tunnel oxide SONOS device (5nm), called the NROM™ device, uses 'hot electron injection for programming and 'hot hole band-to-band tunneling' for erase. The NROM™ device provides spatially isolated, two-bit storage with the possibility of multi-level charge (MLC) storage at each bit location. This paper describes the physical electronics for these device structures and their erase/write, retention and endurance characteristics. In addition, several novel SONOS device structures are discussed as potential candidates for future NVSM.

A high mobility two-dimensional electron system exhibits large changes in the resistance, and zero-resistance states, under microwave and Terahertz excitation. We describe associated experimental results and the possibility of using this system as a radiation detector.

It’s vital to research on the gas-sensing materials and their devices for the development of gas sensors. Nowadays, except of the early semiconductor oxides, various novel materials have been used for gas sensors, e.g. conjugated polymers, carbon materials. The early ceramic devices mainly based on semiconductor oxides have been widely used for commercialization, while they have some difficulties in the making process. Simultaneously, the gas-sensing analysis systems designed for the analysis of the ceramic devices can’t be appropriate for all of the novel devices. The planar technology is more suitable for new sensor materials as they can make up for the deficiency in the fabrication process of ceramic sensors. The novel analysis systems exploited for planar devices will play an important role in the development of gas sensors. This paper introduces the present status of gas sensors as well as some novel gas-sensing analysis systems.