In this work, we study the influence of the temperature on the mechanism of current transfer in the reverse branch of the current–voltage (I–V) characteristics of n-CdS/p-CdTe heterostructures. The study of the heterostructure, using the technique of on energy-dispersive X-ray analysis, showed that a layer of CdSxTe1−x is formed at the boundary of the heterojunction with a varying composition, being equal x≈0.48 from the side of CdS and x≈0.02 from the CdTe side. In the studied range of the temperatures and bias voltage, the current-voltage characteristics are described well by a power law J=AVα, where the exponent α changes with the temperature and voltage. Under the influence of the temperature and charge carrier concentration, the mechanism of current transfer in the structure changes from exclusion (α≈0.5) to ohmic (α≈1), and then goes to injection (α≈2). The inhomogeneous intermediate CdSxTe1−xi-layer at the boundary of the n-CdS/p-CdTe heterostructure is characterized by the presence of metastable states that rearrange at high temperatures and certain charge carrier concentrations. As a result of this, the exclusion slows down and electrons are injected from the rear molybdenum contact.