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Mid to Long Wave Infrared Photodetectors Using Intra-Mini-Energy Band Transitions in GeOx Cladded Ge Quantum Dot Superlattice (QDSL) FETs
Preview AbstractThis paper presents a photogate MOS-FET device, which would function as an infrared photodetector in the 0.3-0.4 eV range involving intra-mini-energy band transitions in the GeOx-cladded Ge quantum dot channel. Energy band density of states (DOS), mini-energy band separations for indirect as well direct bands are computed.
Mid to Long Wave Infrared Photodetectors Using Intra-Mini-Energy Band Transitions in GeOx Cladded Ge Quantum Dot Superlattice (QDSL) FETs
Preview AbstractThis paper presents a photogate MOS-FET device, which would function as an infrared photodetector in the 0.3-0.4 eV range involving intra-mini-energy band transitions in the GeOx-cladded Ge quantum dot channel. Energy band density of states (DOS), mini-energy band separations for indirect as well direct bands are computed.