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Search name	Searched On	Run search
Keyword: Ingaas (1)	1 Apr 2025	Run
Keyword: MTCMOS (2)	1 Apr 2025	Run
[Keyword: Ingaas] AND [All Books] (1)	1 Apr 2025	Run
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articleNo Access
LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO₃ HIGH-K DIELECTRIC
- S. RUMYANTSEV,
- W. STILLMAN,
- M. SHUR,
- T. HEEG,
- D.G. SCHLOM,
- S. KOVESHNIKOV,
- R. KAMBHAMPATI,
- V. TOKRANOV, and
- S. OKTYABRSKY
International Journal of High Speed Electronics and Systems01 Mar 2011
Preview Abstract
Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO₃ high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

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