Silicon and Germanium on Insulator and Advanced CMOS and MOSHFETsNo Access

LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO₃ HIGH-K DIELECTRIC

S. RUMYANTSEV

Rensselaer Polytechnic Institute, Troy NY 12180-3590, USA

Ioffe Institute of Russian Academy of Sciences, 194021 St. Petersburg, Russia

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W. STILLMAN

Rensselaer Polytechnic Institute, Troy NY 12180-3590, USA

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M. SHUR

Rensselaer Polytechnic Institute, Troy NY 12180-3590, USA

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T. HEEG

Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA

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D.G. SCHLOM

Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA

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S. KOVESHNIKOV

College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203, USA

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R. KAMBHAMPATI

College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203, USA

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V. TOKRANOV

College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203, USA

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, and

S. OKTYABRSKY

College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203, USA

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https://doi.org/10.1142/S0129156411006441Cited by:2 (Source: Crossref)

Abstract

Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO₃ high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

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