Keyword: Trap Density : Search

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

Existing users will be able to log into the site and access content. However, E-commerce and registration of new users may not be available for up to 12 hours.
For online purchase, please visit us again. Contact us at customercare@wspc.com for any enquiries.

Advanced Search

SEARCH GUIDE

Results: 1 - 2of2

Follow results:

per page:

Sort: Relevance

Context for search term 1Search term 1*

All Dates

LastSelect static range

Custom Range

Select starting monthSelect starting year

Select ending monthSelect ending year

articleNo Access
LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO₃ HIGH-K DIELECTRIC
- S. RUMYANTSEV,
- W. STILLMAN,
- M. SHUR,
- T. HEEG,
- D.G. SCHLOM,
- S. KOVESHNIKOV,
- R. KAMBHAMPATI,
- V. TOKRANOV, and
- S. OKTYABRSKY
International Journal of High Speed Electronics and Systems01 Mar 2011
Preview Abstract
Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO₃ high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.
chapterNo Access
LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO₃ HIGH-K DIELECTRIC
- S. RUMYANTSEV,
- W. STILLMAN,
- M. SHUR,
- T. HEEG,
- D. G. SCHLOM,
- S. KOVESHNIKOV,
- R. KAMBHAMPATI,
- V. TOKRANOV, and
- S. OKTYABRSKY
Frontiers in Electronics16 Jun 2013
Preview Abstract
Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO₃ high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

1