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A broadband low-noise amplifier (LNA) using 0.13 $\mu$m GaAs HEMT technology for Ku-band applications is presented in this paper. By introducing an improved self-bias architecture, the LNA is achieved with low noise figure (NF) and high power gain. Compared with traditional LNA, self-bias architecture can reduce DC supplies to single one, and the improved architecture proposed here also takes part in source matching to reduce the complexity matching networks for broadband applications. To verify, an LNA operating over 12–18-GHz bandwidth is fabricated. The measurement results, for all the 72 chips on the wafer, and their average values are in great accordance with the simulation results, with 25.5–27.5-dB power gain, 1.1–1.8-dB NF, 15–17.5-dBm output power at $P_{1\mathrm{\text{dB}}}$ and with a chip size of 2 mm $\ast$ 1.5 mm.

In this paper, the design of a wideband monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) fabricated in 0.13-$\mu$m GaAs pHEMT process is presented. A simple T-type input matching network (IMN) and a source feedback structure are employed to achieve low noise figure (NF). The MMIC LNA, which operates across 12–18GHz, can be used for satellite applications. Experimental results show an NF around 1.5dB in 12–17.5GHz and a minimum NF of 1.21dB at 16.5GHz. In addition, a flat small-signal gain of $22\pm 0.5$dB is achieved at 13.5–17.5GHz. The input return loss is lower than $-10$ dB at 12–14.5GHz and the output return loss is lower than $-10$ dB at 12–17GHz. The power consumed is lower than 0.3W and the $P_{1\mathrm{\text{dB}}}$ (1-dB compression point) output power is around 13dBm.