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Memory circuit elements are of interest due to their use in different fields of science and technology. In this research, a new multi-outputs operational transconductance amplifiers (MO-OTA)-based memcapacitor emulator is proposed. The proposed emulator employs two OTAs, two capacitors, two resistors and an analog multiplier. The memcapacitor emulator circuit has electronically tunability property. Charge value of the memcapacitor can be adjusted by changing the transconductance $g_m$ value with the biasing current of the MO-OTA or frequency value of the input signal. In order to analyze the performance of the proposed circuit, memcapacitor emulator is simulated in 0.18$\mu$m TSMC CMOS process using LTSPICE and the simulation results are demonstrated.

In this paper, two simple circuits are presented to emulate both memcapacitor and meminductor circuit elements. The emulation of these components has crucial importance since obtaining these high-order elements from markets is difficult when compared to resistor, capacitor and inductor. For this reason, we proposed Multi-Output Operational Transconductance Amplifier (MO-OTA)-based electronically controllable memcapacitor and meminductor circuits. To operate the MOS transistor as a capacitor, drain and source terminals are connected to each other. The memcapacitor behavior is obtained by driving the connected terminals with suitable voltage values. Only a few active and grounded passive components which are found in markets easily are used to emulate meminductive behavior. Furthermore, all passive elements in the circuit are grounded. All simulation results for memcapacitor and meminductor emulators are obtained successfully when compared to previous studies. For all analyses, MO-OTA is laid using the Cadence Spectre Analog Environment with TSMC 0.18$\mu$m process parameters and occupied a layout area of only 86.21$\mu \mathrm{\text{m}}\times 34.67\mu$m.