Narrow Results

This paper presents the design of a CMOS low-noise amplifier (LNA) with partial inductive degeneration using active inductors in $0.35\mu$m technology. Both, the inductor of the partial degeneration and the load inductor, are actives. The inductors configurations are cascode with feedback resistance and Wu folded compact. The LNA has a gain of 13.2dB and a noise figure of 4.7dB at 1.8GHz. The layout has an active area of $0.17{\text{mm}}^2$. The results are satisfactory, validating the compact design and demonstrating the technical feasibility of this proposed topology.