Narrow Results

Despite the recent progress in understanding the geometric structures of defects and edges in a graphene device (GD), how such defects and edges affect the transport properties of the device have not been clearly defined. In this study, the surface geometric structure of a GD was observed with an atomic force microscope (AFM) and the spatial variation of the transport current by the gating tip was measured with scanning gate microscopy (SGM). It was found that geometric corrugations, defects and edges directly influence the transport current. This observation is linked directly with a proposed scattering model based on macroscopic transport measurements.

Despite the recent progress in understanding the geometric structures of defects and edges in a graphene device (GD), how such defects and edges affect the transport properties of the device have not been clearly defined. In this study, the surface geometric structure of a GD was observed with an atomic force microscope (AFM) and the spatial variation of the transport current by the gating tip was measured with scanning gate microscopy (SGM). It was found that geometric corrugations, defects and edges directly influence the transport current. This observation is linked directly with a proposed scattering model based on macroscopic transport measurements.