Narrow Results

We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.

Since crystal structure dictates the resultant physical properties of materials, titled physical features of the P2₁ monoclinic SiGe semiconductors, which are still unclear, have been revealed by density functional theory (DFT). The electronic band gap value with 0.49eV was found to be in the order of previously published cubic and hexagonal closed-packed SiGe semiconductors. Surprisingly, P2₁ monoclinic SiGe has a room temperature Seebeck coefficient of 1500$\mu$V/K which is higher than the reported data of both cubic and hexagonal SiGe alloys. Further, the mechanically stable P2₁ monoclinic phase of the SiGe displays a brittle mechanical character with clear elastic anisotropy has also been deduced. The P2₁ monoclinic phase of the SiGe can be also considered a good high-dielectric material and beneficial for practical applications of IR or UV goals due to its high refractive index.