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articleNo Access
Intensive Terahertz Radiation from In_XGa_1-XAs due to Photo-Dember Effect
International Journal of High Speed Electronics and Systems01 Sep 2016
Preview Abstract
We have proposed and investigated In_yGa_1-yAs photoconductor grown by molecular-beam epitaxy on low-temperature step-graded metamorphic buffer. It exhibits superior bandwidth up to 6 THz and provides optical-to-terahertz conversion efficiency up to ~ 10⁻⁵ for rather low optical fluence ~ 40 μJ/cm². The intensity of THz generation for the given structure is two orders higher than for lowtemperature grown GaAs due substantial contribution of photo-Dember effect.
chapterNo Access
Intensive Terahertz Radiation from In_xGa_1-xAs due to Photo-Dember Effect
Fundamental and Applied Problems of Terahertz Devices and Technologies06 Mar 2017
Preview Abstract
We have proposed and investigated In_yGa_1-yAs photoconductor grown by molecular-beam epitaxy on low-temperature step-graded metamorphic buffer. It exhibits superior bandwidth up to 6 THz and provides optical-to-terahertz conversion efficiency up to ∼ 10⁻⁵ for rather low optical fluence ∼ 40 μJ/cm². The intensity of THz generation for the given structure is two orders higher than for low-temperature grown GaAs due substantial contribution of photo-Dember effect.