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Intensive Terahertz Radiation from InxGa1-xAs due to Photo-Dember Effect
https://doi.org/10.1142/9789813223288_0013Cited by:0 (Source: Crossref)
Abstract:
We have proposed and investigated InyGa1-yAs photoconductor grown by molecular-beam epitaxy on low-temperature step-graded metamorphic buffer. It exhibits superior bandwidth up to 6 THz and provides optical-to-terahertz conversion efficiency up to ∼ 10−5 for rather low optical fluence ∼ 40 μJ/cm2. The intensity of THz generation for the given structure is two orders higher than for low-temperature grown GaAs due substantial contribution of photo-Dember effect.
