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We have designed GaAs/Al_0.15Ga_0.85As multilayer heterostructure (MH) with diagonal transitions and optimized oscillator strength – 0.425. We investigate the dependence of the MH energy band profile on the electric field and thermal properties of terahertz quantum cascade lasers (THz QCL) under different operation conditions. Furthermore, we develop a technique for the fabrication of THz QCL with double metal waveguide via low-temperature In-Au wafer bonding followed by substrate removal. Inductively coupled plasma reactive ion etching in BCl₃/Ar at 15:15 sccm has been used to obtain ridge structure of various widths with vertical sidewalls.

We report on sub-terahertz plasmonic wave generation in the 2DEG channel of diamond TeraFET when biased by a DC current at the drain. Our numerical results demonstrated that p-diamond can support resonant oscillation of 300 GHz at room temperature, allowing it to function as a sub-THz emitter. We investigated the impact of different channel lengths, gate biases, drift velocities, and temperatures on the fundamental mode oscillation. The model incorporated the decay factors owing to electron scattering and electron fluid viscosity.

We have designed GaAs/Al_0.15Ga_0.85As multilayer heterostructure (MH) with diagonal transitions and optimized oscillator strength – 0.425. We investigate the dependence of the MH energy band profile on the electric field and thermal properties of terahertz quantum cascade lasers (THz QCL) under different operation conditions. Furthermore, we develop a technique for the fabrication of THz QCL with double metal waveguide via low-temperature In-Au wafer bonding followed by substrate removal. Inductively coupled plasma reactive ion etching in BCl₃/Ar at 15:15 sccm has been used to obtain ridge structure of various widths with vertical sidewalls.