Narrow Results

We have characterized and modeled the integrated diode of a 1.2kV 4H-SiC power MOSFET. We have measured its static and dynamic characteristics up to 200°C and extracted relevant SPICE model parameters. From the extracted turn-on voltage and ideality factors, we conclude that the integral diode is not a pin junction diode, but a unipolar diode.

Ga₂O₃ has gained worldwide interests for next-generation power electronics because its large critical field strength stemming from an ultra-wide bandgap promises miniaturized circuits and systems with high conversion efficiency. Intense pursuit of Ga₂O₃ power devices stimulated by early demonstrations of high-voltage Ga₂O₃ field effect transistors (FETs) has brought about tremendous advancements in this new technology, whose strong radiation tolerance and high thermal stability also befit harsh-environment applications. In this paper, we review the various types of depletionand enhancement-mode Ga₂O₃ FETs — which have predominantly been lateral devices — for power switching and radiation-hard electronics. The development of vertical Ga₂O₃ transistors based on a low-cost, highly-manufacturable ion implantation doping process will also be discussed.

Ga₂O₃ has gained worldwide interests for next-generation power electronics because its large critical field strength stemming from an ultra-wide bandgap promises miniaturized circuits and systems with high conversion efficiency. Intense pursuit of Ga₂O₃ power devices stimulated by early demonstrations of high-voltage Ga₂O₃ field effect transistors (FETs) has brought about tremendous advancements in this new technology, whose strong radiation tolerance and high thermal stability also befit harsh-environment applications. In this paper, we review the various types of depletion-and enhancement-mode Ga₂O₃ FETs — which have predominantly been lateral devices — for power switching and radiation-hard electronics. The development of vertical Ga₂O₃ transistors based on a low-cost, highly-manufacturable ion implantation doping process will also be discussed.

We have characterized and modeled the integrated diode of a 1.2kV 4H-SiC power MOSFET. We have measured its static and dynamic characteristics up to 200°C and extracted relevant SPICE model parameters. From the extracted turn-on voltage and ideality factors, we conclude that the integral diode is not a pin junction diode, but a unipolar diode.