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In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the new detectors and other issues related to infrared imaging.
Sample Chapter(s)
Chapter 1: Fundamentals (797 KB)
Contents:
- Fundamentals
- Energy Levels in One-Dimensional Quantum Wells
- Quantum Wells in Crystal Lattices
- Quantum Wells in the Presence of Interaction
- Intersubband Transition in Quantum Wells
- Optical Coupling for Quantum Well Infrared Photodetectors
- Hot-Electron Transistors
- Excitation Hot-Electron Spectroscopy of Quantum Wells
- Transport Properties of Multiple Quantum Well Structures
- Quantum Well Infrared Photodetector
- Infrared Hot-Electron Transistor
- Noise Properties of Infrared Hot-Electron Transistor
- Multi-Color QWIP and IHET
- Performance of Quantum Well Infrared Photodetectors
Readership: Solid state physicists, device physicists, materials scientists and infrared engineers.
