No Access

Lattice Relaxation of Epitaxial FAPbI₃ on MAPbCl_xBr_3-x (001)

Elisa Parent

Electrical and Computer Engineering Department, University of Connecticut, Storrs, CT 06269-4157, USA

Search for more papers by this author

Johanna Raphael

Electrical and Computer Engineering Department, University of Connecticut, Storrs, CT 06269-4157, USA

Electrical and Computer Engineering Department, University of Hartford, Hartford, CT 06117, USA

Search for more papers by this author

Tedi Kujofsa

Electrical and Computer Engineering Department, University of Connecticut, Storrs, CT 06269-4157, USA

Search for more papers by this author

, and

J. E. Ayers

Electrical and Computer Engineering Department, University of Connecticut, Storrs, CT 06269-4157, USA

Corresponding author.

Search for more papers by this author

https://doi.org/10.1142/9789811270796_0006Cited by:0 (Source: Crossref)

Abstract:

Halide perovskite materials such as FAPbI₃ are of great interest for photovoltaic applications and could replace silicon cells if problems of chemical instability, strain and crystal defects are solved. In this paper we present a preliminary modeling study of lattice relaxation in epitaxial FAPbI₃ on MAPbCl_xBr_3-x (001).

Keywords:

Nanostructures for Electronics, Photonics, Biosensors and Emerging Systems Applications

Metrics

Downloaded 0 times

History

Keywords

PDF download

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

Lattice Relaxation of Epitaxial FAPbI3 on MAPbClxBr3-x (001)

Recommended

Lattice Relaxation of Epitaxial FAPbI₃ on MAPbCl_xBr_3-x (001)