Narrow Results

The development of solar cells using mixed organic-inorganic perovskite materials requires the epitaxial deposition of thin films on large-area, lattice-mismatched substrates. It is therefore important to understand the effects of lattice mismatch, elastic strain, and lattice defects on device performance. In this paper, we have conducted a preliminary investigation to estimate the critical layer thickness for lattice relaxation in FAPbBr_xI_3-x alloys deposited epitaxially on KCl (001) substrates. The critical layer thickness exceeds 10 nm in the vicinity of 2.2 < x < 2.8, but is strongly dependent on x as well as growth temperature, so the achievement of stable, coherently-strained epitaxial layers will require tight control of the composition and uniformity.

Halide perovskite materials such as FAPbI3 are of great interest for photovoltaic applications and could replace silicon cells if problems of chemical instability, strain and crystal defects are solved. In this paper we present a preliminary modeling study of lattice relaxation in epitaxial FAPbI₃ on MAPbCl_xBr_3-x (001).

The development of solar cells using mixed organic-inorganic perovskite materials requires the epitaxial deposition of thin films on large-area, lattice-mismatched substrates. It is therefore important to understand the effects of lattice mismatch, elastic strain, and lattice defects on device performance. In this paper, we have conducted a preliminary investigation to estimate the critical layer thickness for lattice relaxation in FAPbBr_xI_3-x alloys deposited epitaxially on KCl (001) substrates. The critical layer thickness exceeds 10 nm in the vicinity of 2.2 < x < 2.8, but is strongly dependent on x as well as growth temperature, so the achievement of stable, coherently-strained epitaxial layers will require tight control of the composition and uniformity.

Halide perovskite materials such as FAPbI₃ are of great interest for photovoltaic applications and could replace silicon cells if problems of chemical instability, strain and crystal defects are solved. In this paper we present a preliminary modeling study of lattice relaxation in epitaxial FAPbI₃ on MAPbCl_xBr_3-x (001).