Chapter 3. Ultra High Speed Devices and ConceptsNo Access

FLUCTUATIONS AND ULTRAFAST PROCESSES IN VOLTAGE-BIASED TWO-DIMENSIONAL CHANNELS

ARVYDAS MATULIONIS

Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania

https://doi.org/10.1142/S0129156408005886Cited by:1 (Source: Crossref)

Abstract

Hot-electron fluctuation techniques were developed for experimental investigation of picosecond and subpicosecond electronic and phononic processes in voltage-biased 2DEG channels of interest for microwave low-noise and high-power transistors. Examples illustrate real-space transfer, hot-electron energy relaxation, and occupancy relaxation of hot-phonon modes. The pioneering results on hot-electron energy relaxation and hot-phonon lifetime are confirmed by time-resolved response experiments. The fluctuation technique for measuring the hot-phonon lifetime as a function of the hot-phonon temperature is unique, no datum has been reported for comparison as yet.

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