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CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN 1.2kV 4H-SiC VERTICAL POWER MOSFET

HARSH NAIK

Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY-12180, USA

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YI WANG

Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY-12180, USA

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T. PAUL CHOW

Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY-12180, USA

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https://doi.org/10.1142/S0129156409006229Cited by:0 (Source: Crossref)

Abstract

We have characterized and modeled the integrated diode of a 1.2kV 4H-SiC power MOSFET. We have measured its static and dynamic characteristics up to 200°C and extracted relevant SPICE model parameters. From the extracted turn-on voltage and ideality factors, we conclude that the integral diode is not a pin junction diode, but a unipolar diode.

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References

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Vol. 19, No. 01

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CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN 1.2kV 4H-SiC VERTICAL POWER MOSFET

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