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A NOVEL ADAPTIVE CURRENT BIASED LINEAR RADIO-FREQUENCY POWER AMPLIFIER ON SIGE HBT PROCESS

TUO WU

Institute of Microelectronics, Tsinghua University, Beijing, 100084, China

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HONGYI CHEN

Institute of Microelectronics, Tsinghua University, Beijing, 100084, China

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DAHONG QIAN

Accel Semiconductor Corp. (Shanghai), Shanghai, 201203, China

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https://doi.org/10.1142/S021812661000661XCited by:2 (Source: Crossref)

Abstract

A novel adaptive current biased CLASS-A/shallow AB RF power amplifier is demonstrated in this paper. By theoretical deduction, a prototype is described to improve the linearity of a linear PA. With the realization on Jazz 0.35 μm SiGe HBT process and test verification, the novel adaptive current biased RF power amplifier shows 3 ~ 7 dB improvement of the ACPR at the output power of 19 dBm to meet the demand of CDMA IS95 spectrum mask without debasing the efficiency.

This paper was recommended by Regional Editor Krishna Shenai.

Keywords:

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