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Leakage current of fluorinated polyimide film was measured as function of time, electric field and sample temperature. Several existing conduction and charge transport mechanism was fit to the experimental results. It was concluded that the bulk limited Pool–Frenkel conduction mechanism was likely to dominate for the leakage current at high electric field (higher than 1 MV/cm) and Ohmic conduction was main conduction mechanism at low electric field (lower than 1 MV/cm).
The deviations of ideality, such as shifts or distortions, in the Capacitance-Voltage (C-V) curve were examined to characterize charges in fluorinated polyimide film in MPOS (Cu-fluorinated polyimide film-SiO2-Si) test structure. It was observed that charges in fluorinated polyimide film hard baked at 325°C and annealed at 425°C were mobile and positive charged. The mobile charge concentration was 1011/cm2 and the activation energy of the drift of positive mobile charge was 0.6 V.
The hysteresis behavior of charges was observed in Capacitance-Voltage (C-V) curve characteristics of fluorinated polyimide film in MPS (Cu-fluorinated polyimide film-Si) test structure. The degree of hysteresis was almost constant up to 150°C and then sharply increased beyond 150°C. Hysteresis behavior up to 150°C was due to a fixed amount of mobile charges at the interface between fluorinated polyimide film and Si and one beyond 150°C was due to abrupt increase of mobile charges and their enhanced movement in the bulk of fluorinated polyimide film due to structural transition of fluorinated polyimide film.