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International Journal of High Speed Electronics and Systems cover

Volume 19, Issue 01 (March 2009)

SPECIAL ISSUE: ON ADVANCED HIGH SPEED DEVICES; EDITED BY PAUL MAKI AND MICHAEL S. SHUR
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PREFACE
  • Pages:iii–v

https://doi.org/10.1142/S0129156409006023

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SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED ULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODES FOR THz POWER GENERATION
  • Pages:1–6

https://doi.org/10.1142/S0129156409006035

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5-TERMINAL THzGaN BASED TRANSISTOR WITH FIELD- AND SPACE-CHARGE CONTROL ELECTRODES
  • Pages:7–14

https://doi.org/10.1142/S0129156409006047

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PERFORMANCE COMPARISON OF SCALED III-V AND Si BALLISTIC NANOWIRE MOSFETs
  • Pages:15–22

https://doi.org/10.1142/S0129156409006059

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A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR HIGH PERFORMANCE APPLICATIONS
  • Pages:23–31

https://doi.org/10.1142/S0129156409006060

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EMISSION AND INTENSITY MODULATION OF TERAHERTZ ELECTROMAGNETIC RADIATION UTILIZING 2-DIMENSIONAL PLASMONS IN DUAL-GRATING-GATE HEMT'S
  • Pages:33–53

https://doi.org/10.1142/S0129156409006072

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MILLIMETER WAVE TO TERAHERTZ IN CMOS
  • Pages:55–67

https://doi.org/10.1142/S0129156409006084

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THE EFFECTS OF INCREASING AlN MOLE FRACTION ON THE PERFORMANCE OF AlGaN ACTIVE REGIONS CONTAINING NANOMETER SCALE COMPOSITIONALLY INHOMOGENEITIES
  • Pages:69–76

https://doi.org/10.1142/S0129156409006096

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SURFACE ACOUSTIC WAVE PROPAGATION IN GaN-ON-SAPPHIRE UNDER PULSED SUB-BAND ULTRAVIOLET ILLUMINATION
  • Pages:77–83

https://doi.org/10.1142/S0129156409006102

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SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES
  • Pages:85–92

https://doi.org/10.1142/S0129156409006114

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MONTE CARLO SIMULATIONS OF In0.75Ga0.25As MOSFETs AT 0.5 V SUPPLY VOLTAGE FOR HIGH-PERFORMANCE CMOS
  • Pages:93–100

https://doi.org/10.1142/S0129156409006126

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THE FIRST 70NM 6-INCH GaAs PHEMT MMIC PROCESS
  • Pages:101–106

https://doi.org/10.1142/S0129156409006138

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HIGH-PERFORMANCE 50-NM METAMORPHIC HIGH ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES
  • Pages:107–112

https://doi.org/10.1142/S012915640900614X

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MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES ON SAPPHIRE
  • Pages:113–119

https://doi.org/10.1142/S0129156409006151

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PERFORMANCE OF MOSFETs ON REACTIVE-ION-ETCHED GaN SURFACES
  • Pages:121–127

https://doi.org/10.1142/S0129156409006163

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HIGH CURRENT DENSITY/HIGH VOLTAGE AlGaN/GaN HFETs ON SAPPHIRE
  • Pages:129–135

https://doi.org/10.1142/S0129156409006175

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InAlN/GaN MOS-HEMT WITH THERMALLY GROWN OXIDE
  • Pages:137–144

https://doi.org/10.1142/S0129156409006187

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GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS
  • Pages:145–152

https://doi.org/10.1142/S0129156409006199

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4-NM AlN BARRIER ALL BINARY HFET WITH SiNx GATE DIELECTRIC
  • Pages:153–159

https://doi.org/10.1142/S0129156409006205

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EFFECT OF GATE OXIDE PROCESSES ON 4H-SiC MOSFETs ON (000-1) ORIENTED SUBSTRATE
  • Pages:161–166

https://doi.org/10.1142/S0129156409006217

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CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN 1.2kV 4H-SiC VERTICAL POWER MOSFET
  • Pages:167–172

https://doi.org/10.1142/S0129156409006229

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PACKAGING AND WIDE-PULSE SWITCHING OF 4 MM × 4 MM SILICON CARBIDE GTOs
  • Pages:173–181

https://doi.org/10.1142/S0129156409006230

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BI-DIRECTIONAL SCALABLE SOLID-STATE CIRCUIT BREAKERS FOR HYBRID-ELECTRIC VEHICLES
  • Pages:183–192

https://doi.org/10.1142/S0129156409006242